Electron scattering distribution in InP at 50 kV

Publisher Website
Google Scholar
Abstract
High‐resolution patterning of InP is gaining importance for electronic and photonic applications such as distributed feedback lasers and high‐speed transistors. Electron‐beam lithography is the highest resolution and most flexible technology for these applications. Unfortunately, backscattered electron effects become an imposing limitation when both coarse and fine pattern features are combined or fill factor variations are encountered in a single writing level. These effects are substantially larger in InP than in Si, and it is necessary to better understand the electron scattering consequences to properly correct for proximity exposure. We have used point exposures in polymethylmethacrylate resist to make the first determination of the electron energy distributions on InP at 50 keV. These results are more directly useful for proximity corrections than the earlier data from line exposures on InP. We also report the first experimental estimates of the backscatter exposure coefficient η e which is about twice that observed on Si. Optimum exposure conditions for various pattern requirements are also discussed.

This publication has 0 references indexed in Scilit: