Magnetoluminescence of self-assembled InP dots of various sizes
- 15 July 1998
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 58 (4) , 2026-2030
- https://doi.org/10.1103/physrevb.58.2026
Abstract
We present photoluminescence measurements of self-assembled InP quantum dots on a GaAs surface (i.e., freestanding dots), under the influence of a high magnetic field. Reasonably sharp luminescence features are seen corresponding to the ground state, and several excited states. Magnetic-field-dependent measurements are presented and compared with calculations based on a finite-difference method using the envelope approximation. The calculations include a realistic pyramidal shape for the dots, as well as strain. We find good agreement between theory and experiments.Keywords
This publication has 15 references indexed in Scilit:
- Microphotoluminescence studies of single quantum dots. II. Magnetic-field experimentsPhysical Review B, 1997
- Photoluminescence spectroscopy of self-assembled InAs quantum dots in strong magnetic field and under high pressureApplied Physics Letters, 1997
- Stacking InAs islands and GaAs layers: Strongly modulated one-dimensional electronic systemsJournal of Applied Physics, 1996
- Excited states of individual quantum dots studied by photoluminescence spectroscopyApplied Physics Letters, 1996
- Zeeman Effect in Parabolic Quantum DotsPhysical Review Letters, 1996
- Improved size homogeneity of InP-on-GaInP Stranski-Krastanow islands by growth on a thin GaP interface layerJournal of Crystal Growth, 1995
- Observation of strain effects in semiconductor dots depending on cap layer thicknessApplied Physics Letters, 1995
- Electron-Hole Transitions between States with Nonzero Angular Momenta in the Magnetoluminescence of Quantum DotsPhysical Review Letters, 1995
- Photoluminescence of Single InAs Quantum Dots Obtained by Self-Organized Growth on GaAsPhysical Review Letters, 1994
- Self-organized growth of regular nanometer-scale InAs dots on GaAsApplied Physics Letters, 1994