Microwave operation of submicrometer channel-length Silicon MOSFET's
- 1 January 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 6 (1) , 36-39
- https://doi.org/10.1109/edl.1985.26034
Abstract
Aluminum-gate silicon n-channel MOSFET's with channel lengths down to 0.5 µm have been fabricated. A simple four-mask process based on contact optical lithography was used. Partial self-alignment of the gate to the channel could be achieved because of an enhanced oxidation rate over the source/drain due to the heavy arsenic implantation. Accordingly, parasitics were minimized and the devices showed excellent microwave performance withf_{\max}and fTnear 20 GHz.Keywords
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