High-performance AlGaAs/GaAs HBT's utilizing proton-implanted buried layers and highly doped base layers

1 December 1987

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 34 (12) , 2393-2398
https://doi.org/10.1109/T-ED.1987.23326

Abstract

Fabrication of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) using a proton-implanted external collector layer and a highly doped base layer is presented. Influence of the proton implantation on base-collector junction characteristics is systematically investigated. At the optimized implantation condition, a buried semi-insulating layer beneath the external base is formed without deteriorating the junction current-voltage characteristics. In a fabricated HBT with 2 µm × 10 µm emitter size, a cutoff frequency fTof 50 GHz and a maximum oscillation frequency fmaxof 70 GHz have been achieved.

Keywords

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