Low Temperature Alloyed Contact Formation in Various Metal-Semiconductor Couples

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Abstract
Metal (Au, Cu, or Pd)/semiconductor (InSb, InP, or GaP) contact systems were studied by Auger electron spectroscopy with the aid of Ar+ ion sputtering. For all systems, even at room temperature, considerable fractions of atoms constituting semiconductors were found to accumulate on metal surfaces, indicating ready interfacial interaction between these materials. From the depth profiling of the specimens, the existence of alloyed interface regions or low temperature alloyed contact formation was ascertained. From these results in addition to our previous data, the alloyed contact formation at metal-semiconductor interface is discussed in connection with the mechanism of Fermi-level pinning in the problem of metal-semiconductor potential barriers.

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