Very high purity InP layers grown by adduct-MOVPE
- 24 July 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 96 (3) , 691-692
- https://doi.org/10.1016/0022-0248(89)90069-9
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High purity group III — Trialkyl phosphine adducts by novel synthetic routesJournal of Crystal Growth, 1986
- Characterisation of MOCVD InP grown from different adduct sourcesJournal of Crystal Growth, 1984
- Electrochemical studies of group III alkyl derivatives: II. Synthesis of adducts of trimethylindium and trimethylgalliumJournal of Organometallic Chemistry, 1984
- A new approach to MOCVD of indium phosphide and gallium-indium arsenideJournal of Crystal Growth, 1981