Diffusion of vacancies and interstitials to edge dislocations

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Abstract
The steady‐state diffusion of radiation‐produced point defects in the stress field of an edge dislocation is solved by a perturbation method. The drift term entering the diffusion equation includes the size interaction and the inhomogeneity interaction as well as the effects of externally applied loads. By comparing the perturbation solution with the rigorous solution of Ham, we show that the perturbation solution is always adequate provided the drift term is proportional to the gradient of the interaction energy of the point defect with the dislocation. The steady‐state distributions of vacancies and interstitials is such that voids or vacancy clusters preferentially grow on the compressive side of the edge dislocation. The external stresses give rise to an orientation‐dependent bias of the edge dislocation which is shown to provide a possible mechanism for radiation‐induced creep.

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