c-axis penetration depth in Bi2Sr2CaCu2O8+δ single crystals measured by ac-susceptibility and cavity perturbation technique

Abstract
The c-axis penetration depth Δλc in Bi2Sr2CaCu2O8+δ (BSCCO) single crystals as a function of temperature has been determined using two techniques, namely, measurements of the ac-susceptibility at a frequency of 100 kHz and the surface impedance at 9.4 GHz. Both techniques yield an almost linear function Δλc(T)∝T in the temperature range TTc. Electrodynamic analysis of the impedance anisotropy has allowed us to estimate λc(0)≈50 µm in BSCCO crystals overdoped with oxygen (Tc≈84 K) and λc(0)≈150 µm at the optimal doping level (Tc≈90 K).
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