Large high-speed DRO film memories

1 November 1964

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Communication and Electronics

Vol. 83 (75) , 842-851
https://doi.org/10.1109/tcome.1964.6592619

Abstract

IN RECENT YEARS there has been a growing interest in the various types of magnetic film memories; a large part of this interest has centered on the high-speed capabilities of destructive read out (DRO) word-organized film memories. Most of the DRO film memories built to date have been of a modest size and have used a field arrangement first proposed by Raffel.1–6 In this arrangement, a word-select transverse field is applied to read out the information and a longitudinal field is applied, along with the transverse word field, in order to write the information back into the memory. Although the memories built so far have been of a modest size, system needs dictate an interest in large high-speed memories.

Keywords

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