Emission spectral width broadening for InGaAsP/InP superluminescent diodes

1 January 1991

journal article
Published by Institution of Engineering and Technology (IET) in IEE Proceedings J Optoelectronics

Vol. 138 (2) , 133-138
https://doi.org/10.1049/ip-j.1991.0024

Abstract

This is a study of emission spectral width broadening for 1.3 μm and 1.5 μm InGaAsP/InP superluminescent diodes (SLDs). It proposes two new fabricated structures, stacked active layer (STAC) and tandem active layer (TANAC), and confirms that the emission spectral widths can be successfully broadened for both. By applying these new active layer structures to laser diodes (LDs), two new functions are demonstrated. One is wavelength-switching in STAC LDs and the other is SLD/LD mode switching in TANAC LDs.

Keywords

1.3 MICRON
1.5 MICRON
TANDEM ACTIVE LAYER
EMISSION SPECTRAL WIDTH BROADENING
WAVELENGTH-SWITCHING
MODE SWITCHING
INGAASP-INP
LASER DIODES
STACKED ACTIVE LAYER
SUPERLUMINESCENT DIODES

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