Evidence for metastable defects in amorphous silicon thin film transistors
- 1 December 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 77-78, 1409-1412
- https://doi.org/10.1016/0022-3093(85)90919-6
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Annealing and light induced changes in the field effect conductance of amorphous siliconJournal of Applied Physics, 1982