Ballistic Transport in Artificial Nano-Circuits

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Abstract
Some remarkable features of the two-terminal transmission probability T(E) of artificial nano-circuits are clarified. These include a switching effect of T(E) caused by applying a magnetic field to the system, as well as large induced loop currents in the internal ring parts. The electric current passing through the nano-circuits is calculated by the Landauer-Büttiker formalism using the Green's function method and the tight-binding scattering matrix method. The two-terminal conductance vanishes when the interference of the electron wave makes the value of T(E) zero, or when the energy of the incident electron corresponds to the degenerate energy levels of the circuit satisfying a certain condition of the wavefunctions. It is also found that a large loop current in the nano-circuit is induced by a small source-drain current for a particular energy region.