Band-gap narrowing in the space-charge region of heavily doped silicon diodes
- 28 February 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (1-2) , 187-191
- https://doi.org/10.1016/0038-1101(85)90229-1
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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