Novel magnetic-field sensor using carrier-domain rotation: operation and practical performance

11 November 1976

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 12 (23) , 610-611
https://doi.org/10.1049/el:19760466

Abstract

A magnetic field applied to a circular p-n-p-n structure causes rotation of a carrier domain, the localised region where bipolar-transistor action occurs. A theoretical explanation is given of device operation, including the dependence of rotation frequency on flux density. Experimental results are given for a prototype device.

Keywords

SEMICONDUCTOR MAGNETIC FIELD SENSOR
DEPENDENCE OF ROTATION FREQUENCY ON FLUX DENSITY
CARRIER DOMAIN ROTATION AROUND CIRCULAR PATH
PLANAR STRUCTURE
OPERATION
PRACTICAL PERFORMANCE
PROTOTYPE DEVICE
PULSED OUTPUT
CIRCULAR P-N-P-N STRUCTURE
TRANSDUCERS
EXPERIMENTAL RESULTS

This publication has 1 reference indexed in Scilit:

Novel magnetic-field sensor using carrier-domain rotation: proposed device design
Electronics Letters, 1976