Effect of thin HgTe layers on dislocations in HgCdTe layers on Si substrates

29 July 1996

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 69 (5) , 677-678
https://doi.org/10.1063/1.117803

Abstract

We have found the effects of HgTe layers on dislocations of (111)B HgCdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. The dislocations in HgCdTe layers were reduced by inserting thin HgTe layers between HgCdTe and CdTe buffer layers. Using this method, the dislocation density of 2.3×10⁶ cm⁻² was obtained, which is less than quarter that of HgCdTe layers without HgTe.

Keywords

MERCURY TELLURIDES
CADMIUM TELLURIDES
VPE
DISLOCATIONS
MULTILAYERS
TEMPERATURE DEPENDENCE
ETCH PITS

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