Characterization of fluorinated hydrogenated amorphous silicon nitride (a-SiNx:H) alloys
- 15 July 1994
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 76 (2) , 1055-1061
- https://doi.org/10.1063/1.357823
Abstract
Fluorinated a‐SiNx:H(0≤x≤0.19) alloys prepared using glow discharge decomposition of NF3 and SiH4 have been characterized using infrared absorption and the constant photocurrent method (CPM). The bonding configurations and the oscillator strengths of various bonds in these alloys have been obtained from the infrared‐absorption spectra. The density of defects and their distribution in the band gap have been obtained without making any assumptions about the form of the distribution. It is found that in this composition range the main defect is the neutral silicon dangling bond and the concentration of charged dangling bonds is either too low or they are not present in these alloys. The possible role of fluorine in these alloys is also discussed.This publication has 18 references indexed in Scilit:
- Porous silicon and siloxene: Vibrational and structural propertiesPhysical Review B, 1993
- Configurational statistics in a- alloys: A quantitative bonding analysisPhysical Review B, 1988
- Bonding configuration of fluorine in fluorinated silicon nitride filmsJournal of Applied Physics, 1988
- Structure and optical properties of plasma-deposited fluorinated silicon nitride thin filmsJournal of Applied Physics, 1988
- Plasma enhanced chemical vapor deposition of fluorinated silicon nitride using SiH4-NH3-NF3 mixturesApplied Physics Letters, 1987
- The electronic properties of plasma-deposited films of hydrogenated amorphous SiNx (0<x<1.2)Journal of Applied Physics, 1986
- Electrical properties of silicon nitride films plasma-deposited from SiF4, N2, and H2 source gasesJournal of Applied Physics, 1985
- Chemical effects on the frequencies of Si-H vibrations in amorphous solidsSolid State Communications, 1979
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977
- Optical Properties and Electronic Structure of Amorphous GermaniumPhysica Status Solidi (b), 1966