Growth of CeO 2 thin films by laser ablation
- 5 December 1991
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 27 (25) , 2304-2305
- https://doi.org/10.1049/el:19911427
Abstract
Thin films of CeO2 have been grown in situ on silicon (111) and silicon (100) by laser ablation. Results from X-ray diffraction 0–20 scans indicate that both the substrate temperature and the oxygen partial pressure are crucial in promoting growth in the preferential [111] direction.Keywords
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