Topography Of GaAs/AlgaAs Heterostructures Using The Lateral Photo Effect
- 9 February 1989
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 1028, 197-202
- https://doi.org/10.1117/12.950344
Abstract
We studied the lateral photo effect in CaAs/A1xGa1-xAs heterostructures both theoretically and experimentally. We observe a linear dependence of the photo voltage as a function of the position of the light spot. In our model this corresponds to a recombination length of the spatially separated electrons and holes longer than the length of the sample (1 mm). Deviations of this linear dependence are a direct indication of inhomogeneities in the conductive properties of the two-dimensional electron gas at the interface of the heterostructure. Results are shown in which long (1 mm) but very narrow cracks are seen.Keywords
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