The determination of interface layers by spectroscopic ellipsometry
- 1 June 1979
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 60 (2) , 183-192
- https://doi.org/10.1016/0040-6090(79)90188-3
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eVJournal of Applied Physics, 1977
- Quantitative Detection of Oxygen in Silicon Nitride on SiliconJournal of the Electrochemical Society, 1976
- Optical Properties of Silicon NitrideJournal of the Electrochemical Society, 1973
- Optical properties of non-crystalline Si, SiO, SiOx and SiO2Journal of Physics and Chemistry of Solids, 1971