Integration process for photonic integrated circuitsusing plasmadamage induced layer intermixing
- 16 March 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (6) , 449-451
- https://doi.org/10.1049/el:19950342
Abstract
A new quantum-well intermixing process in GaAs/AlGaAs structures, based on ion bombardment damage, has been developed. Bandgap tuned lasers and extended cavity lasers have been fabricated. Results show that the quality of the material is still high after intermixing. Losses as low as 18 dB cm-1 have been measured in the passive waveguides of the extended-cavity lasers.Keywords
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