Ga2O3 films for electronic and optoelectronic applications
- 15 January 1995
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 77 (2) , 686-693
- https://doi.org/10.1063/1.359055
Abstract
Properties of Ga2O3 thin films deposited by electron‐beam evaporation from a high‐purity single‐crystal Gd3Ga5O12 source are reported. As‐deposited Ga2O3 films are amorphous, stoichiometric, and homogeneous. Excellent uniformity in thickness and refractive index was obtained over a 2 in. wafer. The films maintain their integrity during annealing up to 800 and 1200 °C on GaAs and Si substrates, respectively. Optical properties including refractive index (n=1.84–1.88 at 980 nm wavelength) and band gap (4.4 eV) are close or identical, respectively, to Ga2O3 bulk properties. Reflectivities as low as 10−5 for Ga2O3/GaAs structures and a small absorption coefficient (≊100 cm−1 at 980 nm) were measured. Dielectric properties include a static dielectric constant between 9.9 and 10.2, which is identical to bulk Ga2O3, and electric breakdown fields up to 3.6 MV/cm. The Ga2O3/GaAs interface demonstrated a significantly higher photoluminescence intensity and thus a lower surface recombination velocity as compared to Al2O3/GaAs structures.This publication has 24 references indexed in Scilit:
- Plasma Passivation of III-V Semiconductor SurfacesMaterials Science Forum, 1993
- Over-passivation of sulfur treated AlGaAs/GaAs heterojunction bipolar transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Unpinned (100) GaAs surfaces in air using photochemistryApplied Physics Letters, 1986
- GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applicationsJournal of Applied Physics, 1985
- Emitter-Base Junction Size Effect on Current Gain Hfe of AlGaAs/GaAs Heterojunction Bipolar TransistorsJapanese Journal of Applied Physics, 1985
- TEM Cross Section Sample Preparation Technique for III–V Compound Semiconductor Device Materials by Chemical ThinningJournal of the Electrochemical Society, 1984
- Analysis of native oxide films and oxide-substrate reactions on III–V semiconductors using thermochemical phase diagramsThin Solid Films, 1983
- A Proposed Hydrogenation/Nitridization Passivation Mechanism for GaAs and Other III–V Semiconductor Devices, Including InGaAs Long Wavelength PhotodetectorsJournal of the Electrochemical Society, 1982
- Comparison of Zn-doped GaAs layers prepared by liquid-phase and vapor-phase techniques, including diffusion lengths and photoluminescenceJournal of Applied Physics, 1975
- On the frequency response of Ge-magnetodiodesSolid-State Electronics, 1971