High-gain 1-W FET amplifier operating in G band
- 1 January 1976
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A hybrid integrated FET amplifier producing 1 W over a 4.4 - 5.0 GHz frequency range with 34-dB gain and an overall efficiency of 16% will be described. Unit is well suited to replace TWTAs in systems requiring high linear performance.Keywords
This publication has 1 reference indexed in Scilit:
- Automatic Load Contour Mapping for Microwave Power TransistorsIEEE Transactions on Microwave Theory and Techniques, 1974