Neon matrix ESR investigation of 69,71GaAs+ generated by the photoionization of laser vaporized GaAs(s)

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Abstract
The first spectroscopic results are reported for the 69,71GaAs+ cation radical generated by photoionizing GaAs (g) produced by the pulsed laser vaporization of GaAs (s). The GaAs+ cation was trapped in neon matrices at 4 K for ESR investigations which show the ground electronic state to be 4Σ− in agreement with previously reported theoretical calculations. Components of the gallium A tensors are 69Ga; A⊥=184.2(2), A∥=270 (30) MHz, and for 71Ga A⊥=234.4(2), A∥=345(35) MHz. The unresolved As hfs was estimated to be less than 8 MHz for the perpendicular direction and the molecular g⊥ value as 1.9978(2) with g∥ presumably∼2.00. These nuclear hyperfine parameters are used to obtain a description of the valence electronic structure for GaAs+ which can be compared with recent MCSCF/CI theoretical results.