An ion-implanted subsurface monolithic Zener diode
- 1 August 1979
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 14 (4) , 782-784
- https://doi.org/10.1109/jssc.1979.1051266
Abstract
A new ion-implanted subsurface Zener diode structure compatible with bipolar monolithic technology is described. A well-controlled p-implant level determines the breakdown voltage of 6.17 V with a typical measured standard deviation less than 20 mV. The measured long-term stability of the resulting diode was better than 1 mV after continuous operation at 125/spl deg/C for 100h. Temperature compensation of the diode yielded a 6.70 V reference with a temperature coefficient less than 9 ppm//spl deg/C.Keywords
This publication has 1 reference indexed in Scilit:
- A five-terminal plus or minus 15-V monolithic voltage regulatorIEEE Journal of Solid-State Circuits, 1971