Mobility profiling of f.e.t. structures
- 16 March 1978
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 14 (6) , 190-191
- https://doi.org/10.1049/el:19780127
Abstract
Several techniques have been used to obtain electron mobility profiles in GaAs f.e.t. structures. In particular, mobilities have been measured near the interface between the active n layer and the underlying high resistivity material. The most detailed information in this region has been obtained using a Schottky-gated Van der Pauw technique.Keywords
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