A new method for detecting electromigration failure in VLSI metallization
- 1 February 1984
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 19 (1) , 98-99
- https://doi.org/10.1109/jssc.1984.1052092
Abstract
A method has been developed for metallization predictions using a continuous resistance-monitoring technique. A useful lifetime criterion, based on measured resistance changes has been determined that is more sensitive and consequently more accurate than present catastrophic failure techniques.Keywords
This publication has 3 references indexed in Scilit:
- Electromigration in sputtered Al-Cu thin filmsThin Solid Films, 1983
- Correlation between Resistance Ratios and Electromigration Failure in Aluminum FilmsJournal of Vacuum Science and Technology, 1971
- RESISTANCE MONITORING AND EFFECTS OF NONADHESION DURING ELECTROMIGRATION IN ALUMINUM FILMSApplied Physics Letters, 1968