Effect of barrier width on performance of long wavelength GainAs/InP multi-quantum-well lasers

7 July 1988

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 24 (14) , 859-860
https://doi.org/10.1049/el:19880585

Abstract

It is demonstrated that lasing thresholds in GaInAs/InP MQW lasers under electrical injection are sensitive to the InP barrier thickness and that reducing the barrier width contributes significantly to achieving low-threshold, room temperature operation. In contrast, lasing thresholdsunder optical pumping show a relative insensitivity to the barrier width. We show that this behaviour is consistent with preferential hole capture in the leading wells.

Keywords

RATE EQUATION MODEL
GAINAS-INP
PREFERENTIAL HOLE CAPTURE
ROOM TEMPERATURE OPERATION
LOW-THRESHOLD
INP BARRIER THICKNESS
MQW LASERS
BARRIER WIDTH
LASING THRESHOLDS
LONG WAVELENGTH
SEMICONDUCTOR LASER PERFORMANCE
OPTICAL PUMPING
ELECTRICAL INJECTION
MULTI-QUANTUM-WELL LASERS

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