Preparation and Characterizations of CuInxGa1-xSe2 Thin Films Crystallized by Annealing
- 1 January 1993
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 32 (S3)
- https://doi.org/10.7567/jjaps.32s3.62
Abstract
A new approach for fabrication of polycrystalline CuIn x Ga1-x Se2 (0≤x≤1) thin films by annealing of evaporated Cu–In–Ga–Se alloy films has been presented. X-ray diffraction analyses showed that these thin films had chalcopyrite structure and the lattice parameters were varied linearly with x in the thin films. The thin films had optical absorption coefficients in the high 104 cm-1 range and the band gaps were changed from 0.99 to 1.68 eV with decreasing x. The variation of band gaps yielded the bowing parameter of 0.156 eV.Keywords
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