Fully integrated 60-GHz single-ended resistive mixer in 90-nm CMOS technology
- 19 December 2005
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Wireless Components Letters
- Vol. 16 (1) , 25-27
- https://doi.org/10.1109/lmwc.2005.861354
Abstract
This letter presents the design and characterization of a fully integrated 60-GHz single-ended resistive mixer in a 90-nm CMOS technology. A conversion loss of 11.6dB, 1-dB compression point of 6dBm and IIP3 of 16.5dBm were measured with a local oscillator (LO) power of 4dBm and zero drain bias. The possibility of improvement in IIP3 with selective drain bias has been verified. A 3-dB improvement in IIP3 was obtained with 150-mV dc voltage applied at the drain. Microstrip transmission lines are used to realize matching and filtering at LO and radio frequency portsKeywords
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