Optical Transitions in RF Sputtered CuInxGa1-xSe2 Thin Films
- 1 June 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (6A) , L703
- https://doi.org/10.1143/jjap.31.l703
Abstract
Thin films of CuIn x Ga1-x Se2 were produced over the entire range of 0≤x≤1 by rf sputtering. The optical absorption coefficients of the CuIn x Ga1-x Se2 thin films were determined from the measured transmittance and reflectance in the wavelength range of 400 to 2000 nm. The optical absorption spectra for sputtered CuIn x Ga1-x Se2 thin films (x≠0) show three energy gaps, which are attributed to the fundamental edge, and band splitting by crystal-field and spin-orbit splitting, respectively. The primary transition energies exhibit bowing behavior expressed by the relationship E g1=1.674-0.803x+0.130x 2. The second and third transition energies are 0.06-0.08 eV and 0.22-0.27 eV above the primary transition energies, respectively.Keywords
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