Residual strain analysis of epitaxial grown SBT thin films prepared by MOCVD

1 January 2001

journal article
research article
Published by Taylor & Francis in Integrated Ferroelectrics

Vol. 33 (1-4) , 59-69
https://doi.org/10.1080/10584580108222288

Abstract

Epitaxial SrBi₂Ta₂O₉ (SBT) films were prepared on (001) and (110) SrTiO₃ single crystal substrates by MOCVD. High-resolution X-ray Diffractometer was employed to characterize its crystalline quality and residual strain after the deposition. (001)- and (116)-oriented SBT thin films growth on (001) and (110) STO substrates were ascertained by XRD analysis. The lattice parameters of epitaxial SBT thin films were obtained by X-ray Reciprocal Space Mapping measurements. It was found that the lattice parameters were almost identical with those of bulk crystal in spite of the large lattice mismatch between SBT thin film and STO substrate.

Keywords

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