On the power dependence of extraneous microwave fields in atomic frequency standards
- 18 January 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
We show that the frequency bias caused by distributed cavity phase has a strong dependence on microwave power. We also show that frequency biases associated with microwave leakage have distinct signatures in their dependence on microwave power and the physical location of the leakage interaction with the atom.Keywords
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