On the detectivity of quantum-dot infrared photodetectors
- 28 May 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (22) , 3523-3525
- https://doi.org/10.1063/1.1376435
Abstract
We report on the analysis of thermally-limited operation of quantum-dot infrared photodetectors(QDIPs). A device model is developed and used to calculate the QDIP detectivity as a function of the structural parameters, temperature, and applied voltage, as well as to determine the conditions for the detectivity maximum. The QDIP detectivity is compared with that of quantum-well infrared photodetectors(QWIPs). This work clarifies why the existing QDIPs are still inferior to QWIPs and shows that a significant improvement in the QDIP performance can be accomplished by the utilization of dense QD arrays with small QDs.Keywords
This publication has 23 references indexed in Scilit:
- Normal-incident intersubband photocurrent spectroscopy on InAs/GaAs quantum dotsApplied Physics Letters, 1999
- A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetectorApplied Physics Letters, 1999
- Self-assembled InAs-GaAs quantum-dot intersubband detectorsIEEE Journal of Quantum Electronics, 1999
- Quantum Dot Infrared Photodetector Using Modulation Doped InAs Self-Assembled Quantum DotsJapanese Journal of Applied Physics, 1999
- Characteristics of InGaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Intersublevel transitions in InAs/GaAs quantum dots infrared photodetectorsApplied Physics Letters, 1998
- Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectorsApplied Physics Letters, 1998
- Growth and characterization of InGaAs/InGaP quantum dots for midinfrared photoconductive detectorApplied Physics Letters, 1998
- Far-infrared photoconductivity in self-organized InAs quantum dotsApplied Physics Letters, 1998
- The theory of quantum-dot infrared phototransistorsSemiconductor Science and Technology, 1996