Interlayer diffusion in InSb/GaSb superlattice structure grown by multitarget rf sputtering
- 1 August 1977
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 31 (3) , 156-158
- https://doi.org/10.1063/1.89636
Abstract
The rate of interlayer diffusion during annealing of InSb/GaSb superlattice structures with layer thicknesses ranging from 12.5 to 50 Å has been investigated. The films were grown by multitarget rf sputtering on InSb‐coated Corning 7059 glass slides. The InSb underlayers were deposited at 320 °C and were approximately 300 Å thick. The multilayer films had a total thickness of ∼1 μm and were grown at either 200 or 250 °C in an Ar sputtering pressure of 15 mTorr (2 Pa). Prior to annealing the samples were encapsulated in a 1000‐Å‐thick rf sputtered overlayer of In2O3. InSb/GaSb interlayer diffusion was investigated using x‐ray diffraction techniques in which the intensity of satellite peaks around the Bragg reflection peaks were monitored as a function of annealing time. A diffusion coefficient of 4.5×10−21 cm2/sec was determined for an annealing temperature of 320 °C.Keywords
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