Impurity-Assisted Inelastic Tunneling: One-Electron Theory

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Abstract
A new theory of inelastic tunneling through insulating barriers containing impurities with vibrational modes is presented. The method is based upon a stationary-state formulation of the problem, and is a direct extension of the conventional treatment of elastic tunneling which appears in standard texts. In this paper the inelastic processes for one electron are studied in first Born approximation and compared with the results for a model interaction which can be solved exactly. The physical implications of the treatment are discussed and certain results are established for later use in the many-electron theory to be presented in the following paper.

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