Radiation Damage in Semiconductor Detectors

1 June 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 29 (3) , 1087-1100
https://doi.org/10.1109/TNS.1982.4336328

Abstract

A survey is presented of the important damage-producing interactions in semiconductor detectors and estimates of defect numbers are made for MeV protons, neutrons and electrons. Damage effects of fast neutrons in germanium gamma ray spectrometers are given in some detail. General effects in silicon detectors are discussed and damage constants and their relationship to leakage current is introduced.

Keywords

RADIATION DETECTORS
SEMICONDUCTOR RADIATION DETECTORS
NEUTRONS
PROTONS
ELECTRONS
GERMANIUM
SPECTROSCOPY
SILICON
LEAK DETECTION
LEAKAGE CURRENT

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