Process-Induced Morphological Defects in Epitaxial CVD Silicon Carbide

• 1 July 1997
• journal article
• Published by Wiley in Physica Status Solidi (b)
• Vol. 202  (1) , 529-548
• https://doi.org/10.1002/1521-3951(199707)202:1<529::aid-pssb529>3.0.co;2-e

Abstract

Keywords

• SEMICONDUCTOR DEVICES
• CRYSTAL DEFECTS
• MICROSTRUCTURE
• THIN FILMS
• VAPOR DEPOSITION
• EPITAXY
• CRYSTAL STRUCTURE
• ATOMIC FORCE MICROSCOPY
• MORPHOLOGY
• WAFERS
• CRYSTAL GROWTH