621 nm CW operation (0%C) of AlGaInP visible semiconductor lasers

6 November 1986

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 22 (23) , 1265-1266
https://doi.org/10.1049/el:19860866

Abstract

Continuous-wave (CW) operation (0°C at 621 nm has been achieved for the first time by an AlGaInP mesa stripe laser, grown by metalorganic vapour-phase epitaxy. The lasing wavelength is shorter than the He-Ne gas laser's wavelength, 633 nm. The CW threshold current is 60 mA (4.8 kA/cm²).

Keywords

METALORGANIC VAPOUR-PHASE EPITAXY
CW OPERATION
621 NM
0 DEGC
III-V SEMICONDUCTORS
CONTINUOUS WAVE OPERATION
THRESHOLD CURRENT
LASING WAVELENGTH
VISIBLE SEMICONDUCTOR LASERS
MOVPE
ALGAINP MESA STRIPE LASER
60 MA

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