Surface modification of silicon (111) by annealing at high temperature in hydrogen
- 22 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (17) , 2349-2351
- https://doi.org/10.1063/1.115854
Abstract
A vicinal silicon (111) surface exhibits well defined single steps after being annealed at 1200 °C in hydrogen, which is in sharp contrast with step bunches featuring the surfaceannealed in argon. As a temporary explanation for its ability to unzip the step bunches, we suggest that hydrogen destroys the faulted triangles of a [112̄] step, eliminates this kind of step, and eventually leaves the single [1̄1̄2] steps alone behind on the surface.Keywords
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