Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors
- 1 November 1986
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 15 (6) , 383-387
- https://doi.org/10.1007/bf02661889
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- (In,Ga)As/InP n-p-n heterojunction bipolar transistors grown by liquid phase epitaxy with high DC current gainIEEE Electron Device Letters, 1984
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- The junction depth of concentration-dependent diffusion. Zinc in III–V compoundsSolid-State Electronics, 1964
- Diffusion and solubility of zinc in indium phosphideSolid-State Electronics, 1964