Photoinduced paramagnetic defects in amorphous silicon dioxide
- 15 June 1984
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 29 (12) , 7079-7081
- https://doi.org/10.1103/physrevb.29.7079
Abstract
Several paramagnetic defects are photoinduced in amorphous Si by sub-band-gap light. The resulting EPR spectrum changes dramatically as the excitation energy is varied, and is sensitive to the OH content of the material. A three-component resonance seen in high-OH-content Si is ascribed to a nitrogen-impurity-related defect.
Keywords
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