Microplasma breakdown in high-voltage p–n junctions
- 1 April 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (4) , 129-130
- https://doi.org/10.1049/el:19660102
Abstract
The voltage-breakdown characteristics of controlled-avalanche junctions demonstrate the presence of microplasmas whose bistable current-switching properties are described. Microplasmas are exhibited by both diffused and alloyed junctions. The relationship between the breakdown voltage of the first microplasma with temperature for 1500–1800 V junctions is similar to that reported for 7–128 V junctions.Keywords
This publication has 0 references indexed in Scilit: