High-quality In_0.3Ga_0.7N/GaN quantum well growth and their optical and structural properties

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10 August 2001

journal article
Published by IOP Publishing in Semiconductor Science and Technology

Vol. 16 (9) , 783-788
https://doi.org/10.1088/0268-1242/16/9/308

Abstract

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Keywords

This publication has 1 reference indexed in Scilit:

Superlattice-like stacking fault and phase separation of InxGa1−xN grown on sapphire substrate by metalorganic chemical vapor deposition
Applied Physics Letters, 2000