Channelling studies of ion implantation induced lattice defects in zinc telluride

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Abstract
Channelling effect measurements were used to study the disorder induced by ion implantation in Zinc Telluride at 77 K and 300 K. The experimental set up is described and its principal advantages are (a) the use of a cryogenic pumping (b) the possibility to perform simultaneous implantations and analyses. The channelling parameters of interest are measured: critical angle, minimum yield and stopping power. 120 keV argon implantations are performed a t room temperature. A disorder saturation is evidenced for doses higher than 1015 ions/cm2 but the “random” level is not reached. Implantations and analyses at 77 K are made. The “random” level is not reached and sputtering during implantation is observed. To explain this saturation the following explanations are proposed: an equilibrium is reached between the defect production and the removal process and/or the iconicity of Zinc Telluride does not allow a complete lattice disordering.