Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer
- 1 May 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 175-176, 1016-1021
- https://doi.org/10.1016/s0022-0248(96)00892-5
Abstract
No abstract availableKeywords
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