Diffusion of indium in silicon inert and oxidizing ambients
- 1 December 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (12) , 9214-9216
- https://doi.org/10.1063/1.330394
Abstract
The diffusion of indium in silicon at 1000 °C has been measured in inert (dry nitrogen) and oxidizing (dry oxygen) ambients. It was found that, similarly to phosphorous, boron, and arsenic, indium experiences significant oxidation‐enhanced diffusion. This result indicates that indium, like the other elements mentioned above, diffuses in silicon by a mixed interstitialcy and vacancy mechanism. It was also found that indium, similarly to gallium, segregates readily and diffuses rapidly in thermal silicon dioxide.This publication has 5 references indexed in Scilit:
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