Efficiency limitation by transverse instability in Si IMPATT diodes
- 1 January 1974
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 62 (2) , 284-285
- https://doi.org/10.1109/PROC.1974.9420
Abstract
Measurements of large-signal impedance, ac voltage and dc voltage V0versus dc current I0on Si p-n-n+IMPATT diodes in pulse operation (80 ns) suggest that the efficiency of Si IMPATT diodes is limited by instability effects causing a splitup into regions with different current densities. The effect is explained by considering the I0-V0curves at constant ac voltage. These can be S-shaped owing to impact ionization in the drift region.Keywords
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