Nanoscale Al patterning on an STM-manipulated Si surface
- 1 August 1996
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 281-282, 640-643
- https://doi.org/10.1016/0040-6090(96)08705-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Atomic hydrogen resist process with electron beam lithography for selective Al patterningJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1994
- Nanoscale patterning and oxidation of H-passivated Si(100)-2×1 surfaces with an ultrahigh vacuum scanning tunneling microscopeApplied Physics Letters, 1994
- Local hydride formation of the Si(111)-(7×7) surface by hydrogen atoms deposited from a scanning tunneling microscope tipPhysical Review Letters, 1994
- Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STMScience, 1991
- Atomic-scale conversion of clean Si(111):H-1×1 to Si(111)-2×1 by electron-stimulated desorptionPhysical Review Letters, 1990
- Modification of hydrogen-passivated silicon by a scanning tunneling microscope operating in airApplied Physics Letters, 1990
- Positioning single atoms with a scanning tunnelling microscopeNature, 1990
- Direct deposition of 10-nm metallic features with the scanning tunneling microscopeJournal of Vacuum Science & Technology B, 1988
- Summary Abstract: Electron‐stimulated desorption as a probe of hydrogen adsorption on and diffusion into Pd(111)Journal of Vacuum Science & Technology A, 1986
- Über die Kinetik der Reaktion H2 (Gas) ⇄ 2 Η (gelöst in Pd)Zeitschrift für Physikalische Chemie, 1932