Minimizing plasma damage and in situ sealing of ultralow-k dielectric films by using oxygen free fluorocarbon plasmas
- 1 September 2005
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 23 (5) , 2198-2202
- https://doi.org/10.1116/1.1961910
Abstract
Ultralow-k nanocrystalline silica films with an open porosity of 30–31% and a pore radius of 0.8–0.9 nm have been etched using oxygen free highly polymerizing fluorocarbon plasma. It is shown that such plasma allows minimization of plasma damage in comparison with standard oxygen containing CF4 based plasmas and provides in situ sealing of the pores by deposition of fluorocarbon polymers in the film. We also demonstrate that the resulting surface is well suited for the nucleation and growth of atomic layer deposited WCN films. Characterization of the etched low-kdielectric by various analytical instrumentations demonstrates feasibility of this approach for integration of ultralow-kdielectric filmsKeywords
This publication has 4 references indexed in Scilit:
- Modification of Nanoporous Silica Structures by Fluorocarbon Plasma TreatmentMRS Proceedings, 2004
- Low dielectric constant materials for microelectronicsJournal of Applied Physics, 2003
- Non-destructive characterisation of porous low-k dielectric filmsMicroelectronic Engineering, 2002
- Determination of pore size distribution in thin films by ellipsometric porosimetryJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000