Gain uniformity of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption, grading, and multiplication regions
- 1 September 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 21 (9) , 1310-1313
- https://doi.org/10.1109/jqe.1985.1072848
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- Material‐Selective Chemical Etching in the System InGaAsP / InPJournal of the Electrochemical Society, 1979
- Room-temperature operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.1 μmApplied Physics Letters, 1976